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savantic semiconductor product specification silicon npn power transistors 2SC3230 d escription with to-220 package complement to type 2sa1276 good linearity of h f e applications general purpose applications cordless telephone tx final amplifier application for 1.7mhz system pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 30 v v ceo collector-emitter voltage open base 30 v v ebo emitter-base voltage open collector 5 v i c collector current 3 a i e emitter current -3 a p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3230 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 30 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 5 v v ce(sat) collector-emitter saturation voltage i c =2a ;i b =0.2 a 0.3 0.8 v v be base-emitter on voltage i c =0.5a ; v ce =2v 0.75 1.0 v i cbo collector cut-off current v cb =20v; i e =0 1.0 a i ebo emitter cut-off current v eb =5v; i c =0 1.0 a h fe-1 dc current gain i c =0.5a ; v ce =2v 70 240 h fe-2 dc current gain i c =2.5a ; v ce =2v 25 c ob collector output capacitance i e =0; v cb =10v,f=1mhz 35 pf f t transition frequency i c =0.5a ; v ce =2v 100 mhz h fe-1 classifications o y 70-140 120-240
savantic semiconductor product specification 3 silicon npn power transistors 2SC3230 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)

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